STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 4

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
V
Symbol
Symbol
R
C
CASE
V
(BR)DSS
g
C
C
I
I
C
Q
inceases from 0 to 80% V
DS(on)
oss eq
Q
GS(th)
R
GSS
fs
Q
DSS
(2)
oss
oss eq.
rss
iss
gs
gd
G
(1)
g
=25°C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
V
I
V
V
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
V
V
(see Figure 15)
I
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
GS
GS
DS
DS
DS
= 5.5A
= 250 µA, V
=0, V
=480V, I
= V
= 10V, I
=25V, f=1 MHz, V
> I
=10V
= 600 V
= 600 V, Tc=125°C
= ±30V
Test conditions
Test conditions
D(on)
GS
DS
, I
D
D
D
x R
=0V to 480V
= 5.5A
= 250µA
= 11A
GS
DS(on)max,
= 0
GS
=0
Min.
Min.
600
3
1000
Typ.
Typ.
230
100
5.2
1.6
0.4
25
30
10
15
4
oss
Max.
Max.
±
0.45
when V
100
10
1
5
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω