STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 3

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
R
Symbol
Symbol
dv/dt
R
I
SD
thj-case
P
V
DM
V
T
E
thj-a
T
T
I
I
I
TOT
ISO
GS
AR
stg
D
D
AS
l
J
(2)
≤ 11A, di/dt ≤ 400A/µs, V
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Parameter
Parameter
DD
≤ V
C
Parameter
(BR)DSS
= 25°C
, T
C
C
j
=100°C
≤ T
= 25°C
JMAX
.
TO-220/D²PAK/I²PAK TO-220FP
TO-220/D²PAK/I²PAK TO-220FP
1.28
160
0.78
11
44
--
7
-65 to 150
Value
Value
62.5
±30
150
300
15
Value
350
5.5
Electrical ratings
2500
11
44
0.28
3.57
7
35
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
A
A
A
V
A
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