STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 11

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
DIM.
L20
L30
H1
øP
b1
e1
L1
J1
A
D
E
Q
b
c
e
F
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
Package mechanical data
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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