IXFC110N10P IXYS, IXFC110N10P Datasheet

IXFC110N10P

Manufacturer Part Number

IXFC110N10P

Description

MOSFET N-CH 100V 60A ISOPLUS220

Manufacturer

IXYS

Series

PolarHV™r

Datasheet

1.IXFC110N10P.pdf (5 pages)

Specifications of IXFC110N10P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

17 mOhm @ 55A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

60A

Vgs(th) (max) @ Id

5V @ 4mA

Gate Charge (qg) @ Vgs

110nC @ 10V

Input Capacitance (ciss) @ Vds

3550pF @ 25V

Power - Max

120W

Mounting Type

Through Hole

Package / Case

ISOPLUS220™

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.017 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

60 A

Power Dissipation

120 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

100

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.017

Ciss, Typ, (pf)

3550

Qg, Typ, (nc)

110

Trr, Typ, (ns)

Trr, Max, (ns)

150

Pd, (w)

120

Rthjc, Max, (ºc/w)

1.25

Package Style

ISOPLUS220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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PolarHV

Power MOSFET

ISOPLUS220

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Symbol

dv/dt

Weight

Symbol

D25

GSS

DSS

stg

DSS

DGR

GSS

GSM

SOLD

ISOL

GS(th)

DS(on)

DSS

= 25° C, unless otherwise specified)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

50/60 Hz, RMS

Mounting Force

Test Conditions

= 25° C to 175° C

= 25° C to 175° C; R

= 25° C

= 25° C, pulse width limited by T

= 25° C

≤ I

≤ 150° C, R

= 25° C

= 0 V, I

= V

= ±20 V

= V

= 0 V

= 10 V, I

, di/dt ≤ 100 A/µs, V

DSS

HiPerFET

, I

= 4 mA

= 250 µA

, V

= 55 A

= 4 Ω

t = 1 minute leads-to-tab

= 0

= 1 MΩ

≤ V

= 150° C

DSS

IXFC 110N10P

100

Min.

11..65 / 2.5..15

2.5

Characteristic Values

-55 ... +175

-55 ... +150

Maximum Ratings

Typ.

2500

100

±20

±30

250

120

175

300

260

1.0

±100

250

Max.

5.0

V/ns

N/lb

m Ω

µA

°C

ISOPLUS220

G = Gate

S = Source

Features

Applications

Advantages

Silicon chip on Direct-Copper-Bond

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<35pF)

Low R

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Fast intrinsic Rectifier

AC motor control

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Easy assembly: no screws, or isolation

foils required

Space savings

High power density

Low collector capacitance to ground

(low EMI)

substrate

D25

DS(on)

DSS

E153432

DS (on)

HDMOS

= 100

= 60

≤ ≤ ≤ ≤ ≤ 17 m Ω Ω Ω Ω Ω

(IXFC)

≤ ≤ ≤ ≤ ≤ 150 ns

D = Drain

Isolated back surface

DS99370E(03/06)

process

Related parts for IXFC110N10P

IXFC110N10P Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS DS(on © 2006 IXYS All rights reserved IXFC 110N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 60 250 1.0 ≤ DSS 120 -55 ... +175 175 -55 ... +150 300 260 2500 11..65 / 2.5..15 2 Characteristic Values Min. Typ. 100 2.5 ± ...

Page 2

... Note: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...

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IXFC110N10P IXYS, IXFC110N10P Datasheet

IXFC110N10P

Specifications of IXFC110N10P

Related parts for IXFC110N10P

IXFC110N10P Summary of contents

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