IXFC110N10P IXYS, IXFC110N10P Datasheet - Page 5

• Manufacturer Part Number: IXFC110N10P
• Description: MOSFET N-CH 100V 60A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC110N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 3550
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 120
• Rthjc, Max, (ºc/w): 1.25
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFC 110N10P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
10.00
1.00
0.10
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
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IXYS REF: T_110N10P (6S) 6-15-05-A.xls