IXFC110N10P IXYS, IXFC110N10P Datasheet - Page 4

• Manufacturer Part Number: IXFC110N10P
• Description: MOSFET N-CH 100V 60A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC110N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 3550
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 120
• Rthjc, Max, (ºc/w): 1.25
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
250
225
200
175
150
125
100
350
300
250
200
150
100
100
75
50
25
50
0
0
0.4
4
0
T
J
= 150
f = 1MH z
0.6
5
5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
º
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
C
0.8
10
6
V
V
15
1
V
G S
S D
T
DS
J
7
= 25
- V olts
- V olts
1.2
20
- V olts
T
J
º
= -40
C
8
150
1.4
25
25
º
º
º
C
C
C
9
1.6
30
C is s
C os s
C rss
1.8
1 0
35
40
2
1 1
1000
100
10
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
T
T
DS (on)
V
I
I
J
C
D
G
DS
= 175
= 25
= 55A
= 10m A
Fig. 8. Trans conductance
50
20
= 50V
Lim it
º
º
C
Fig. 10. Gate Char ge
Fig . 12. Fo r w ar d -Bias
Safe Op e r atin g A r e a
C
Q
100
10
40
G
I
D C
V
- nanoCoulombs
D
D S
- A mperes
150
- V olts
60
IXFC 110N10P
100
200
80
100µs
1m s
T
25µs
10m s
J
= -40
150
25
250
100
º
º
º
C
C
C
1000
300
120