IXFC110N10P IXYS, IXFC110N10P Datasheet - Page 3

• Manufacturer Part Number: IXFC110N10P
• Description: MOSFET N-CH 100V 60A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC110N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 3550
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 120
• Rthjc, Max, (ºc/w): 1.25
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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110
100
110
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
3
2
1
0
0
0
Fig. 5. R
V
V
0.2 0.4
GS
GS
25
0.5
Fig. 3. Output Characte r is tics
= 10V
= 15V
Fig. 1. Output Characte r is tics
50
V alue vs . Drain Curr e nt
DS(on)
1
0.6
75
- - - -
V
V
I
1.5
GS
V
D
D S
V
Nor m alize d to I
100 125 150 175 200 225 250
0.8
GS
@ 150
D S
- A mperes
= 10V
@ 25
- V olts
= 10V
9V
- V olts
T
1
2
9V
J
º
º
= 175
C
C
1.2
2.5
º
C
1.4
8V
7V
6V
5V
T
8V
7V
6V
5V
J
= 25
3
D
1.6 1.8
= 55A
º
C
3.5
2
4
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
60
50
40
30
20
10
220
200
180
160
140
120
100
0
80
60
40
20
2
1
0
-50
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
-25
V
-25
V alue vs . Junction Te m pe r atur e
1
GS
Fig . 6. Dr ain C u r r e n t vs . C as e
V
= 10V
GS
2
0
T
0
C
DS(on
T
= 10V
J
- Degrees Centigrade
25
3
- Degrees Centigrade
25
T e m p e r atu r e
)
Norm alize d to I
V
@ 25
4
50
9V
8V
7V
6V
50
D S
I
D
= 110A
5
- V olts
º
75
75
C
IXFC 110N10P
6
100
100
7
I
D
125
D
125
= 55A
= 55A
8
150
150
9
175
175
10