IRFB4620PBF International Rectifier, IRFB4620PBF Datasheet - Page 8
IRFB4620PBF
Manufacturer Part Number
IRFB4620PBF
Description
MOSFET N-CH 200V 25A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFB4620PBF.pdf
(8 pages)
Specifications of IRFB4620PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 50V
Power - Max
144W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
25 A
Power Dissipation
144 W
Mounting Style
Through Hole
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4620PBF
Manufacturer:
MICRON
Quantity:
7 122
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2008
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