IRFB4620PBF International Rectifier, IRFB4620PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB4620PBF
• Description: MOSFET N-CH 200V 25A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4620PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 144 W
• Mounting Style: Through Hole
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
90
80
70
60
50
40
30
20
10
Fig 16. Threshold Voltage vs. Temperature
0
-75 -50 -25
0
I F = 15A
V R = 100V
T J = 25°C
T J = 125°C
200
I D = 100µA
I D = 250uA
ID = 1.0mA
ID = 1.0A
T J , Temperature ( °C )
0
400
di F /dt (A/µs)
25 50 75 100 125 150 175
600
800
2000
1800
1600
1400
1200
1000
800
600
400
200
1000
0
f
I F = 15A
V R = 100V
T J = 25°C
T J = 125°C
200
400
di F /dt (A/µs)
600
2000
1800
1600
1400
1200
1000
800
600
400
200
90
80
70
60
50
40
30
20
10
0
800
f
0
0
I F = 10A
V R = 100V
T J = 25°C
T J = 125°C
I F = 10A
V R = 100V
T J = 25°C
T J = 125°C
1000
200
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
600
800
www.irf.com
800
f
1000
1000
f