IRFB4620PBF International Rectifier, IRFB4620PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4620PBF
• Description: MOSFET N-CH 200V 25A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4620PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 144 W
• Mounting Style: Through Hole
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Fig 11. Typical C
100
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
30
25
20
15
10
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
5
0
-50
0.2
25
T J = 175°C
0.4
Case Temperature
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
50
Forward Voltage
0
T C , Case Temperature (°C)
0.6
OSS
75
50
0.8
Stored Energy
T J = 25°C
100
1.0
100
125
1.2
V GS = 0V
150
150
1.4
200
1.6
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
260
250
240
230
220
210
200
190
100
0.1
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Id = 5mA
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
10
10msec
DC
1msec
100µsec
100
TOP
BOTTOM 15A
125
100
I D
150
2.05A
2.94A
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1000
175