IRFB4620PBF International Rectifier, IRFB4620PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4620PBF
• Description: MOSFET N-CH 200V 25A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4620PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 144 W
• Mounting Style: Through Hole
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
above this value .
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Symbol
Symbol
Symbol
temperature.
I
R
SD
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 15A, di/dt ≤ 634A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 15A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 1.0mH
DD
Ù
≤ V
(BR)DSS
Parameter
Parameter
, T
J
g
≤ 175°C.
- Q
gd
)
g
Ã
…
†
‡
ˆ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
mended footprint and soldering techniques refer to application note #AN-994.
3.0
37
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
θ
oss
oss
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1710
0.23
13.4
22.4
25.4
14.8
–––
–––
–––
–––
–––
–––
–––
125
113
317
–––
–––
–––
294
432
2.6
8.2
7.9
7.6
60
25
17
30
78
99
while V
DS
72.5
-100
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
1.3
is rising from 0 to 80% V
20
38
25
DS
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
Ω
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz (See Fig.5)
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
= 15A
= 15A, V
= 15A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 7.3Ω
= V
= 200V, V
= 200V, V
= 50V, I
= 100V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 130V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
DSS
D
f
f
DS
D
DS
DS
S
D
D
= 250µA
DSS
= 15A, V
.
= 100µA
= 15A
= 15A
=0V, V
GS
GS
= 0V to 160V
= 0V to 160V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 15A
f
D
GS
= 100V,
GS
= 5mA
= 10V
J
= 0V
= 125°C
www.irf.com
g
™
G
f
(See Fig.11)
f
S
D