IRF7779L2TRPBF International Rectifier, IRF7779L2TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7779L2TRPBF
• Description: MOSFET N-CH 150V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7779L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6660pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Gate Charge Qg: 97 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Note: For the most current drawing please refer to IR website at
DirectFET™ Part Marking
www.irf.com
™
DATE CODE
Line above the last character of
PART NUMBER
BATCH NUMBER
the date code indicates "Lead-Free"
GATE MARKING
LOGO
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.18
1.34
9.05
6.85
5.90
0.55
0.58
0.98
0.73
0.38
2.52
0.59
0.03
0.09
MIN
METRIC
DIMENSIONS
http://www.irf.com/package
1.22
1.02
1.47
9.15
7.10
6.00
0.65
0.62
0.77
0.42
2.69
0.70
0.08
0.18
MAX
0.356
0.270
0.232
0.022
0.023
0.046
0.015
0.029
0.015
0.053
0.099
0.023
0.001
0.003
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.028
0.003
0.007
MAX
9