IRF7779L2TRPBF International Rectifier, IRF7779L2TRPBF Datasheet - Page 4
![MOSFET N-CH 150V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7779L2TRPBF
Manufacturer Part Number
IRF7779L2TRPBF
Description
MOSFET N-CH 150V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7779L2TRPBF.pdf
(11 pages)
Specifications of IRF7779L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
6660pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Gate Charge Qg
97 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7779L2TRPBF
Manufacturer:
IR
Quantity:
15 600
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 6. Typical Transfer Characteristics
100000
10000
Fig 4. Typical Output Characteristics
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.1
3.5
1
TOP
BOTTOM
V DS = 50V
≤ 60μs PULSE WIDTH
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
5.5V
Ciss
Coss
Crss
1
10
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
5.5
f = 1 MHZ
6.0
10
100
6.5
T J = 175°C
T J = 25°C
T J = -40°C
7.0
100
7.5
1000
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
14
12
10
10
3.0
2.5
2.0
1.5
1.0
0.5
8
6
4
2
0
Fig 9. Typical Total Gate Charge vs
0.1
0
-60 -40 -20 0
Fig 5. Typical Output Characteristics
I D = 40A
TOP
BOTTOM
I D = 40A
V GS = 10V
20
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
T J , Junction Temperature (°C)
40
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
V DS = 120V
V DS = 75V
V DS = 30V
1
20 40 60 80 100 120 140 160 180
60
≤ 60μs PULSE WIDTH
Tj = 175°C
80
5.5V
10
100
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120
140
100