IRF7779L2TRPBF International Rectifier, IRF7779L2TRPBF Datasheet - Page 6
![MOSFET N-CH 150V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7779L2TRPBF
Manufacturer Part Number
IRF7779L2TRPBF
Description
MOSFET N-CH 150V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7779L2TRPBF.pdf
(11 pages)
Specifications of IRF7779L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
6660pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Gate Charge Qg
97 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7779L2TRPBF
Manufacturer:
IR
Quantity:
15 600
Fig 16. Maximum Avalanche Energy Vs. Temperature
6
280
240
200
160
120
80
40
0
+
-
25
1000
100
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
D.U.T
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET
50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Duty Cycle = Single Pulse
TOP
BOTTOM 1% Duty Cycle
I D = 40A
75
+
-
•
•
•
•
SD
100
•
•
•
0.01
0.05
0.10
1.0E-05
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Single Pulse
125
-
G
150
+
175
1.0E-04
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
tav (sec)
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ΔT
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 19a, 19b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
1.0E-03
thJC
D (ave)
jmax
P.W.
SD
DS
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Waveform
Allowable rise in junction temperature, not to exceed
Waveform
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
Ripple ≤ 5%
Body Diode
P
Period
) = Transient thermal resistance, see figure 11)
D (ave)
Body Diode Forward
Diode Recovery
Current
= 1/2 ( 1.3·BV·I
I
av
E
AS (AR)
dv/dt
Forward Drop
= 2DT/ [1.3·BV·Z
®
di/dt
1.0E-02
Power MOSFETs
= P
D =
jmax
D (ave)
av
av
Period
. This is validated for
P.W.
·f
) = DT/ Z
·t
th
a
]
V
V
I
SD
thJC
GS
DD
www.irf.com
1.0E-01
=10V
*
jmax
is