IRF7779L2TRPBF International Rectifier, IRF7779L2TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7779L2TRPBF
• Description: MOSFET N-CH 150V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7779L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6660pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Gate Charge Qg: 97 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
8
™
D
D
D
G
S
S
S
S
D = DRAIN
G = GATE
S = SOURCE
S
S
S
S
D
D
D
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