STD16N65M5 STMicroelectronics, STD16N65M5 Datasheet - Page 4

• Manufacturer Part Number: STD16N65M5
• Description: MOSFET N-CH 650V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.27ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8774-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss eq.
oss eq.
oss
oss
rss
iss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 18146 Rev 1
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 520 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
, I
17)
GS
D
D
D
= 250 µA
= 6 A
= 0
= 6 A,
GS
C
=125 °C
= 0
STB16N65M5, STD16N65M5
Min.
Min.
650
3
-
-
-
-
-
0.270
1250
Typ.
Typ.
100
30
30
31
12
3
2
8
4
0.299
Max.
Max.
100
100
1
5
-
-
-
-
-
oss
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
pF
V
V
Ω
Ω