STD16N65M5 STMicroelectronics, STD16N65M5 Datasheet - Page 12

• Manufacturer Part Number: STD16N65M5
• Description: MOSFET N-CH 650V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.27ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8774-2

Package mechanical data
12/16
Dim
D
A
b
E
e
L
L
V
c
J
D
H
R
A
b
E
e
L
c
2
2
1
1
1
2
1
1
2
1
4
0
0
1
0
1
8
7
8
4
2
2
1
1
0079457_M
Min
1
1
° 0
4 .
0 .
7 .
1 .
4 .
2 .
9 .
5 .
5 .
8 .
4 .
2 .
2 .
3 .
0
5
0
3
0
4
5
3
5
0
0
8
9
9
7
0
D2PAK (TO-263) mechanical data
Doc ID 18146 Rev 1
Typ
2
m
0
5 .
4 .
m
4
Max
1
1
4
0
0
1
0
1
9
5
2
2
1
1
0
5
° 8
6 .
2 .
9 .
7 .
6 .
3 .
3 .
2 .
6 .
7 .
4 .
7 .
4 .
8 .
3
0
6
8
9
0
5
0
3
0
5
9
0
5
Min
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0 .
0 .
0 .
0 .
0 .
2 .
3 .
3 .
1 .
5 .
0 .
0 .
1 .
3 .
0 .
0 .
° 0
7
0
2
4
1
4
5
9
9
3
9
9
9
9
5
5
STB16N65M5, STD16N65M5
3
1
7
5
7
8
2
5
4
4
2
0
9
0
1
Typ
0
n i
0
0 .
c
1 .
1
h
6
Max
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 .
0 .
0 .
0 .
0 .
0 .
3 .
4 .
2 .
6 .
1 .
1 .
0 .
0 .
° 8
8
0
3
6
2
5
6
0
0
2
0
1
5
6
9
7
8
9
1
7
4
3
8
9
4
6
0
5