STD16N65M5 STMicroelectronics, STD16N65M5 Datasheet - Page 3

• Manufacturer Part Number: STD16N65M5
• Description: MOSFET N-CH 650V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.27ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8774-2

STB16N65M5, STD16N65M5
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
R
Symbol
Symbol
R
dv/dt
I
thj-pcb
DM
P
thj-case
V
V
E
T
I
SD
I
I
TOT
AR
T
GS
DS
AS
stg
D
D
j
(1)
(2)
(1)
≤ 12 A, di/dt ≤ 400 A/µs, V
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Absolute maximum ratings
Thermal data
j
= 25 °C, I
Parameter
Parameter
C
D
Doc ID 18146 Rev 1
DD
= 25 °C
= I
GS
= 400 V, V
AR
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
Peak
max)
< V
(BR)DSS
DPAK
50
- 55 to 150
Value
Value
1.38
± 25
150
650
200
7.3
12
48
90
15
4
D²PAK
Electrical ratings
30
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
3/16