STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 9
![MOSFET N-CH 550V 12A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB12NM50T4
Manufacturer Part Number
STB12NM50T4
Description
MOSFET N-CH 550V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12NM50.pdf
(17 pages)
Specifications of STB12NM50T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5381-2
STB12NM50T4
STB12NM50T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
20 000
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
3
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
Figure 19. Switching time waveform
circuit
Test circuit
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