STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 3
![MOSFET N-CH 550V 12A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB12NM50T4
Manufacturer Part Number
STB12NM50T4
Description
MOSFET N-CH 550V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12NM50.pdf
(17 pages)
Specifications of STB12NM50T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5381-2
STB12NM50T4
STB12NM50T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
20 000
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
I
SD
P
V
DM
R
V
thj-case
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
stg
D
D
AS
AS
≤ 12A, di/dt ≤ 400A/µs, V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Insulation winthstand voltage (DC)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
(BR)DSS
= 25°C
Parameter
C
C
=100°C
= 25°C
TO-220/D²PAK/
/D²PAK/I²PAK
TO-220-
I² PAK
1.28
0.78
160
7.5
12
48
--
-65 to 150
Value
Value
± 30
62.5
300
15
Value
400
Electrical ratings
6
TO-220FP
TO-220FP
7.5
2500
12
48
0.28
3.57
35
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
A
3/17