STB12NM50T4 STMicroelectronics, STB12NM50T4 Datasheet - Page 4
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STB12NM50T4
Manufacturer Part Number
STB12NM50T4
Description
MOSFET N-CH 550V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12NM50.pdf
(17 pages)
Specifications of STB12NM50T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5381-2
STB12NM50T4
STB12NM50T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NM50T4
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
d(on)
Q
Q
DSS
GSS
fs
Q
R
oss
t
oss eq.
rss
iss
gs
gd
r
g
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
V
V
V
V
R
(see Figure 14)
V
V
(see Figure 15)
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DD
G
DS
DS
GS
DS
GS
= 250 µA, V
= 4.7Ω, V
=0, V
=400V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
= 250V, I
= Max rating,
= Max rating @125°C
= ±30V
Test conditions
Test conditions
GS
DS
, I
D
D
D
=0V to 400V
D
= 6A
= 6A
D
GS
= 50µA
= 12A
GS
= 6A,
= 10V
= 0
GS
=0
Min.
500
3
Min. Typ. Max.
Typ.
0.30
4
1000
250
5.5
1.6
20
90
20
10
28
18
8
oss
±
Max.
0.35
when V
10
100
1
5
39
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
ns
ns
S
Ω