STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 5
STD10NM65N
Manufacturer Part Number
STD10NM65N
Description
MOSFET N-CH 650V 9A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STU10NM65N.pdf
(17 pages)
Specifications of STD10NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7957-2
STD10NM65N
STD10NM65N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
101
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
20 000
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
di/dt = 100 A/µs
V
(see Figure 20)
I
di/dt = 100 A/µs
V
(see Figure 20)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 9 A, V
= 9 A,
= 9 A,
= 325 V, I
= 100 V
= 100 V, T
Test conditions
Test conditions
GS
GS
D
= 0
j
= 150 °C
= 4.5 A
= 10 V
Electrical characteristics
Min
Min
Typ
330
430
Typ
19
19
12
50
20
3
4
8
Max
Max Unit
1.3
36
9
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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