STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 9
STD10NM65N
Manufacturer Part Number
STD10NM65N
Description
MOSFET N-CH 650V 9A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STU10NM65N.pdf
(17 pages)
Specifications of STD10NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7957-2
STD10NM65N
STD10NM65N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
101
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
20 000
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
circuit
Test circuit
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