STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 3

MOSFET N-CH 650V 9A DPAK

STD10NM65N

Manufacturer Part Number
STD10NM65N
Description
MOSFET N-CH 650V 9A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD10NM65N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7957-2
STD10NM65N

Available stocks

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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
dv/dt
Symbol
R
Symbol
R
R
I
SD
DM
P
V
V
thj-case
V
T
thj-amb
thj-pcb
E
I
I
TOT
I
T
ISO
GS
T
DS
stg
D
D
AS
AS
j
≤ 9 A, di/dt ≤ 400 A/µs, V
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
max
Thermal resistance junction-pcb max
Thermal resistance junction-amb
max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
Parameter
DD
Parameter
Parameter
= 80% V
C
D
= 25 °C
GS
= I
AS
= 0)
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
= 50 V)
C
= 25 °C)
TO-220
62.5
--
IPAK
1.38
100
TO-220/IPAK
--
DPAK
5.7
36
90
300
--
9
DPAK
Max value
-55 to 150
50
--
Value
± 25
200
150
2.5
650
15
TO-220FP
Electrical ratings
TO-220FP
5.7
2500
36
9
62.5
25
(1)
--
5
(1)
(1)
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
°C
mJ
W
V
V
A
A
A
V
A
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