STB8NM60T4 STMicroelectronics, STB8NM60T4 Datasheet - Page 16

• Manufacturer Part Number: STB8NM60T4
• Description: MOSFET N-CH 650V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5386-2; STB8NM60T4

Packaging mechanical data
16/18
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
E
R
F
TAPE MECHANICAL DATA
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.311 0.319
0.075 0.082
1.574
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
0.476
0.641
STP8NM60, STD5NM60, STB8NM60
DIM.
A
B
C
D
G
N
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
mm
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881