STB8NM60T4 STMicroelectronics, STB8NM60T4 Datasheet - Page 11
![MOSFET N-CH 650V 8A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB8NM60T4
Manufacturer Part Number
STB8NM60T4
Description
MOSFET N-CH 650V 8A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD5NM60T4.pdf
(18 pages)
Specifications of STB8NM60T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
100000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5386-2
STB8NM60T4
STB8NM60T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB8NM60T4
Manufacturer:
STMicroelectronics
Quantity:
41 000
Company:
Part Number:
STB8NM60T4
Manufacturer:
ST
Quantity:
12 500
STP8NM60, STD5NM60, STB8NM60
DIM.
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
Ø
A
B
D
E
F
H
0.45
0.75
1.15
1.15
4.95
28.6
15.9
MIN.
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
2.75
10.4
30.6
10.6
16.4
4.6
2.7
0.7
1.7
1.7
5.2
2.7
3.6
9.3
3.2
1
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
MIN.
Package mechanical data
0.630
TYP.
inch
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
MAX.
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