STB8NM60T4 STMicroelectronics, STB8NM60T4 Datasheet - Page 12

• Manufacturer Part Number: STB8NM60T4
• Description: MOSFET N-CH 650V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5386-2; STB8NM60T4

Package mechanical data
12/18
Dim
D1
A1
E1
V2
b2
c2
e1
J1
L1
L2
D
H
R
A
E
b
c
e
L
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
2.54
mm
Typ
0.4
10.40
15.85
0.23
0.93
1.70
0.60
1.36
5.28
2.69
1.40
1.75
Max
4.60
9.35
2.79
8°
STP8NM60, STD5NM60, STB8NM60
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max
8°