STB7NK80ZT4 STMicroelectronics, STB7NK80ZT4 Datasheet - Page 9

• Manufacturer Part Number: STB7NK80ZT4
• Description: MOSFET N-CH 800V 5.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB7NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1138pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6557-2; STB7NK80ZT4

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
25 Ω
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Test circuits
resistive load
switching and diode recovery times
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(BR)DSS
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3.3
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1000
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Doc ID 8979 Rev 6
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 18. Gate charge test circuit
Figure 20. Unclamped inductive load test
Figure 22. Switching time waveform
V
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10%
2200
µF
1kΩ
GMAX
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2.7kΩ
12V
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47kΩ
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D.U.T.
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100Ω
DS
2200
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100nF
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t
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Test circuits
3.3
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t
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AM01469v1
AM01471v1
AM01473v1
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V
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9/17
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