STB7NK80ZT4 STMicroelectronics, STB7NK80ZT4 Datasheet - Page 6

• Manufacturer Part Number: STB7NK80ZT4
• Description: MOSFET N-CH 800V 5.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB7NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1138pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6557-2; STB7NK80ZT4

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for TO-220,
D
Safe operating area for TO-220FP
Output characteristics
2
PAK, I
2
PAK
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D
Thermal impedance for TO-220FP
Transfer characteristics
2
PAK, I
2
PAK