STB7NK80ZT4 STMicroelectronics, STB7NK80ZT4 Datasheet - Page 5

• Manufacturer Part Number: STB7NK80ZT4
• Description: MOSFET N-CH 800V 5.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB7NK80ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1138pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6557-2; STB7NK80ZT4

STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
I
Symbol
V
SDM
BV
I
RRM
I
SD
Q
SD
t
rr
rr
GSO
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage I
Source drain diode
Gate-source zener diode
Parameter
Parameter
Doc ID 8979 Rev 6
I
I
A/µs
V
(see
SD
SD
DD
GS
= 5.2 A, V
= 5.2 A, di/dt = 100
Test conditions
= 50 V, Tj = 150°C
Figure
= ± 1mA (open drain)
Test conditions
22)
GS
= 0
Electrical characteristics
Min.
Min.
-
-
-
30
Typ.
3.31
12.5
530
Typ.
Max.
Max.
20.8
5.2
1.6
Unit
Unit
µC
ns
A
A
V
A
V
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