STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 4

• Manufacturer Part Number: STU2NK100Z
• Description: MOSFET N-CH 1000V 1.85A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.85 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
V
CASE
oss eq.
(BR)DSS
g
I
C
I
DS(on)
increases from 0 to 80% V
GS(th)
C
C
Q
Q
DSS
GSS
R
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
fs
Q
oss
oss eq.
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
(2)
is defined as constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
I
V
V
V
V
V
f=1 MHz, open drain
V
V
V
V
V
(see Figure 17)
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 1 mA, V
= V
= 10 V, I
=800 V, I
= Max rating,
= Max rating,Tc=125 °C
= ± 30 V
=15 V, I
=25 V, f=1 MHz, V
=0, V
=10 V
Test conditions
Test conditions
GS
STD2NK100Z - STP2NK100Z - STU2NK100Z
, I
DS
D
D
D
GS
=0 to 800 V
D
= 50 µA
= 0.9 A
= 0.9 A
= 1.85 A
= 0
GS
=0
1000
Min.
Min.
3
Typ.
Typ.
3.75
6.25
499
2.4
6.6
53
28
16
9
3
9
oss
when V
Max. Unit
Max. Unit
±
4.5
8.5
50
10
1
DS
pF
pF
pF
pF
nC
nC
nC
µA
µA
µA
S
Ω
V
V
Ω