STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 11
![MOSFET N-CH 1000V 1.85A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU2NK100Z
Manufacturer Part Number
STU2NK100Z
Description
MOSFET N-CH 1000V 1.85A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STU2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.85 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU2NK100Z
Manufacturer:
TI
Quantity:
3 306
STD2NK100Z - STP2NK100Z - STU2NK100Z
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
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