STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 15
![MOSFET N-CH 1000V 1.85A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU2NK100Z
Manufacturer Part Number
STU2NK100Z
Description
MOSFET N-CH 1000V 1.85A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STU2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.85 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU2NK100Z
Manufacturer:
TI
Quantity:
3 306
STD2NK100Z - STP2NK100Z - STU2NK100Z
6
Revision history
Table 10.
18-Jun-2008
24-Oct-2007
Date
Document revision history
Revision
1
2
First release
– Inserted new package, mechanical data IPAK
– Document status promoted from preliminary data to
datasheet.
Changes
Revision history
15/16