STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 3

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
t
I
C
SD
C
C
d(on)
Q
Q
fs
d(off)
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
oss
t
t
t
iss
rss
rr
gd
r
gs
c
f
f
(1)
g
rr
(2)
(1)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
V
I
V
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 3)
Vclamp =48V, I
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
SD
SD
DS
DS
DD
G
DD
GS
DD
G
G
DD
=19 A
= 4.7
= 4.7
= 4.7
= 38A, V
= 38A, di/dt = 100A/µs,
= 25V, f= 1 MHz, V
> I
= 30V, I
= 48V, I
= 10V
= 30V, I
= 100V, T
Test Conditions
Test Conditions
Test Conditions
Test Conditions
D(on)
V
V
V
x R
D
D
D
GS
GS
GS
GS
= 19A
= 38A,
= 19A,
j
D
= 150°C
DS(on)max,
= 0
= 10V
= 10V
= 10V
=38A
GS
= 0
Min.
Min.
Min.
Min.
1730
Typ.
Typ.
Typ.
Typ.
260
215
100
5.5
95
24
63
20
43
15
50
20
45
42
60
9
Max.
Max.
Max.
Max.
STB45NF06
152
1.5
38
58
Unit
Unit
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
A
A
V
A
3/9