STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 2

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

STB45NF06
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
2/9
Rthj-case
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
Symbol
Symbol
SD
R
V
I
(BR)DSS
V
DM
P
I
I
V
DS(on)
V
E
GS(th)
T
I
DSS
GSS
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
D
D
j
38A, di/dt
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
300A/µs, V
Parameter
Parameter
j
DS
= 25 °C, I
DD
= 0)
V
GS
(BR)DSS
= 0)
D
C
GS
Parameter
Parameter
= I
= 25°C
GS
, T
j
= 20 k )
max)
AR
I
V
V
V
V
j
D
DS
DS
GS
DS
GS
= 0)
, V
= 250 µA, V
T
CASE
= Max Rating, T
JMAX.
DD
= Max Rating
= ±20V
= V
= 10 V, I
C
C
Test Conditions
Test Conditions
= 25°C
= 100°C
= 50 V)
GS
= 25 °C UNLESS OTHERWISE SPECIFIED)
, I
D
D
GS
= 250µA
= 19 A
= 0
C
= 125°C
Min.
Min.
60
2
–65 to 175
Max Value
Value
0.53
0.022
±20
152
175
1.87
62.5
300
135
60
60
38
26
80
Typ.
Typ.
38
7
3
0.028
Max.
±100
Max.
10
1
4
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
Unit
mJ
µA
µA
nA
°C
°C
°C
W
V
V
V
A
A
A
A
V
V