STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet

MOSFET N-CH 60V 38A D2PAK

STB45NF06T4

Manufacturer Part Number
STB45NF06T4
Description
MOSFET N-CH 60V 38A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STB45NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
980pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
19A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
235mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10314-2
STB45NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB45NF06T4
Manufacturer:
STMicroelectronics
Quantity:
2 400
Part Number:
STB45NF06T4
Manufacturer:
ST
0
Features
Applications
Description
These devices are an N-channel Power MOSFET
realized with the latest development of
STMicroelectronis unique "single feature size"
strip-based process. The resulting transistors
show extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
July 2010
Exceptional dv/dt capability
Standard threshold drive
100% avalanche tested
Switching application
STP45NF06
STB45NF06
Type
STP45NF06
STB45NF06
Order code
Device summary
V
60 V
60 V
DSS
N-channel 60 V, 0.023 Ω , 38 A TO-220, D
<0.028 Ω
<0.028 Ω
R
DS(on)
P45NF06
B45NF06
Marking
38 A
38 A
Doc ID 7433 Rev 5
I
D
Figure 1.
STripFET
Package
TO-220
D
TO-220
2
PAK
Internal schematic diagram
TM
1
2
3
II Power MOSFET
STB45NF06
STP45NF06
Tape and reel
D
Packaging
2
PAK
Tube
1
www.st.com
2
3
PAK
1/15
15

Related parts for STB45NF06T4

STB45NF06T4 Summary of contents

Page 1

Features Type V DSS STP45NF06 60 V STB45NF06 60 V ■ Exceptional dv/dt capability ■ Standard threshold drive ■ 100% avalanche tested Applications ■ Switching application Description These devices are an N-channel Power MOSFET realized with the latest development of ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB45NF06, STP45NF06 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified). CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STB45NF06, STP45NF06 Table 8. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized breakdown voltage vs. temperature 6/15 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 7433 ...

Page 7

STB45NF06, STP45NF06 Figure 8. Gate charge vs. gate-source voltage Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Figure 9. Capacitance variations Figure 11. Normalized on resistance vs. temperature Doc ID 7433 Rev 5 Electrical ...

Page 8

Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/15 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STB45NF06, STP45NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...

Page 10

Package mechanical data DIM L20 L30 øP Q 10/15 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 ...

Page 11

STB45NF06, STP45NF06 DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 ...

Page 12

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...

Page 13

STB45NF06, STP45NF06 DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 ...

Page 14

Revision history 6 Revision history Table 9. Revision history Date 09-Sep-2004 04-Feb-2005 17-Aug-2006 13-Nov-2006 05-Jul-2010 14/15 Revision 1 Preliminary version. 2 Complete version. 3 New template. No content change. 4 Inserted new value. Section 2.1: Electrical characteristics 5 Updated Doc ...

Page 15

... STB45NF06, STP45NF06 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords