STD2NK70Z-1 STMicroelectronics, STD2NK70Z-1 Datasheet - Page 8

• Manufacturer Part Number: STD2NK70Z-1
• Description: MOSFET N-CH 700V 1.6A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NK70Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 800mA, 10V
• Drain To Source Voltage (vdss): 700V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Figure 12. Normalized B
Capacitance variations
temperature
STD2NK70Z - STD2NK70Z-1
VDSS
vs temperature