STD2NK70Z-1 STMicroelectronics, STD2NK70Z-1 Datasheet - Page 5

• Manufacturer Part Number: STD2NK70Z-1
• Description: MOSFET N-CH 700V 1.6A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NK70Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 800mA, 10V
• Drain To Source Voltage (vdss): 700V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD2NK70Z - STD2NK70Z-1
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
inceases from 0 to 80% V
I
C
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
t
oss eq.
oss
t
rss
iss
gd
r
gs
f
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
V
R
(see Figure 14)
V
V
(see Figure 15)
I
V
V
V
V
V
D
DS
DS
GS
GS
DD
DD
GS
G
DS
DS
GS
DS
GS
= 1mA, V
=4.7Ω, V
=0
=0, V
=350 V, I
=560V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz,
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
GS
D
=0V to 560V
D
= 0.8A
= 0.8A
= 50µA
= 0.8A
= 0.8A,
= 0
=10V
Min.
Min.
Electrical characteristics
700
3
Typ.
11.4
Typ.
280
3.75
1.4
6.5
6.8
35
17
17
20
35
7
2
6
oss
Max.
Max.
±10
when V
4.5
50
1
7
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
S
V
V
Ω
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