STD2NK70Z-1 STMicroelectronics, STD2NK70Z-1 Datasheet - Page 4

• Manufacturer Part Number: STD2NK70Z-1
• Description: MOSFET N-CH 700V 1.6A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NK70Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 800mA, 10V
• Drain To Source Voltage (vdss): 700V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings
1.1
4/16
Table 4.
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
GSO
Gate-source
breakdown voltage
Gate-source zener diode
Parameter
Igs= ±
Test Condition
1mA (open drain)
Min.
30
STD2NK70Z - STD2NK70Z-1
Typ.
Max
Unit
A