STS15N4LLF5 STMicroelectronics, STS15N4LLF5 Datasheet - Page 5

• Manufacturer Part Number: STS15N4LLF5
• Description: MOSFET N-CH 40V 15A 8SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS15N4LLF5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0076 Ohm
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 10 A, 15 A
• Power Dissipation: 3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10579-2

STS15N4LLF5
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17339 Rev 1
I
I
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
SD
SD
= 18 A, V
= 18 A, V
Test conditions
GS
DD
= 0
= 25 V,
Electrical characteristics
Min. Typ.
-
-
-
27.2
24.5
1.8
Max.
1.2
18
72
Unit
nC
ns
A
A
V
A
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