STS15N4LLF5 STMicroelectronics, STS15N4LLF5 Datasheet - Page 3

• Manufacturer Part Number: STS15N4LLF5
• Description: MOSFET N-CH 40V 15A 8SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS15N4LLF5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0076 Ohm
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 10 A, 15 A
• Power Dissipation: 3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10579-2

STS15N4LLF5
1
Electrical ratings
Table 2.
1. Guaranteed for test time < 15ms
2. Pulse width limited by Tjmax
3. Starting T
Table 3.
1.
R
Symbol
Symbol
V
E
I
DM
P
thj-pcb
When mounted of FR-4 board with 1 inch
V
V
GS
AS
T
I
I
TOT
GS
DS
D
D
T
stg
(2)
l
(3)
(1)
(1)
j
Drain-source voltage (V
Gate-source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Single pulse avalanche energy
= 25 °C, I
Thermal resistance
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
Storage temperature
Absolute maximim ratings
D
= 7.5 A, V
Parameter
Parameter
DD
C
Doc ID 17339 Rev 1
= 25 °C
= 25 V
2
GS
pad, 2oz of Cu and t < 10 sec
= 0)
C
C
= 25 °C
= 100 °C
-55 to 150
-55 to 150
Value
Value
1090
± 16
63.6
±18
40
15
10
47
3
Electrical ratings
°C/W
Unit
Unit
mJ
W
°C
°C
V
V
V
A
A
A
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