STS15N4LLF5 STMicroelectronics, STS15N4LLF5 Datasheet - Page 10

• Manufacturer Part Number: STS15N4LLF5
• Description: MOSFET N-CH 40V 15A 8SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS15N4LLF5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0076 Ohm
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 10 A, 15 A
• Power Dissipation: 3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10579-2

Package mechanical data
10/12
Table 1. SO-8 mechanical data
1. Dimensions D does not include mold flash, protru-sions or gate burrs. Mold flash, potrusions or gate burrs
Figure 19. Package dimensions
shall not exceed 0.15mm (.006inch) in total (both side).
Dim.
ddd
D
A1
A2
A
B
C
E
H
e
h
L
k
(1)
1.35
0.10
1.10
0.33
0.19
4.80
3.80
5.80
0.25
0.40
Min
Doc ID 17339 Rev 1
mm.
1.27
Typ
0° (min.), 8° (max.)
Max
1.75
0.25
1.65
0.51
0.25
5.00
4.00
6.20
0.50
1.27
0.10
0.053
0.004
0.043
0.013
0.007
0.189
0.228
0.010
0.016
0.15
Min
0.050
inch
Typ
STS15N4LLF5
0.069
0.010
0.065
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
Max