IRFR540ZPBF International Rectifier, IRFR540ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR540ZPBF
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 28.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
10
40
30
20
10
Fig 9. Maximum Drain Current vs.
1
1E-006
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
SINGLE PULSE
( THERMAL RESPONSE )
0.10
0.05
0.02
Case Temperature
0.01
50
T C , CaseTemperature (°C)
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
J
J
1
Ci= i Ri
2.5
2.0
1.5
1.0
0.5
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i Ri
R
0.001
1
R
I D = 21A
V GS = 10V
1
2
R
2
T J , Junction Temperature (°C)
2
R
vs. Temperature
2
R
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
R
3
3
C
Ri (°C/W)
0.01
2.626
0.6611 0.001297
0.7154
0.000052
0.01832
i (sec)
5
0.1