IRFR540ZPBF International Rectifier, IRFR540ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR540ZPBF
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 28.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
28
0.092
1690
22.5
–––
–––
–––
–––
–––
–––
–––
180
100
720
110
190
–––
–––
–––
4.5
7.5
39
11
12
14
42
43
34
32
40
-200
28.5
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
4.0
1.3
20
59
35
48
60
V/°C
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 21A
= 21A
= 25°C, I
= 25°C, I
= 13
= V
= 25V, I
= 100V, V
= 100V, V
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 50µA
= 21A, V
= 21A, V
= 21A
= 21A
GS
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
DD
GS
J
= 50V
= 125°C
= 0V
G
f
e
S
D