IRFR540ZPBF International Rectifier, IRFR540ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR540ZPBF
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 28.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000.0
3000
2500
2000
1500
1000
100.0
500
10.0
0
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
V SD , Source-to-Drain Voltage (V)
C rss
C oss
C iss
Forward Voltage
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
V GS = 0V
1.2
100
1.4
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge vs.
0
0
I D = 21A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 80V
VDS= 50V
VDS= 20V
1msec
100µsec
10
10msec
30
DC
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40
100
50
1000
60