IRLR8256PBF International Rectifier, IRLR8256PBF Datasheet - Page 7

• Manufacturer Part Number: IRLR8256PBF
• Description: MOSFET N-CH 25V 81A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8256PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 81A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1470pF @ 13V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 81A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 81 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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D.U.T
Fig 15.
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SD
Id
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Vgs
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HEXFET
Fig 16. Gate Charge Waveform
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Power MOSFETs
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Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgd
P.W.
SD
DS
Waveform
Waveform
IRLR/U8256PbF
Ripple ≤ 5%
for N-Channel
Body Diode
Qgs2
Period
Body Diode Forward
Diode Recovery
Vgs(th)
Current
Vds
Qgs1
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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