IRLR8256PBF International Rectifier, IRLR8256PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR8256PBF
• Description: MOSFET N-CH 25V 81A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8256PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 81A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1470pF @ 13V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 81A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 81 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U8256PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
E
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
2
DS(on)
GS(th)
G
iss
oss
rss
AS
AR
SD
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Ù
Parameter
Parameter
gs2
Ù
+ Q
gd
)
™
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25
81
1470
–––
-7.2
–––
–––
–––
–––
–––
453
185
–––
–––
–––
4.2
6.7
1.8
2.3
1.6
3.6
2.6
5.1
9.0
2.5
9.7
8.5
18
10
46
12
19
17
-100
Typ.
81
2.35
–––
––– mV/°C
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
325
5.7
8.5
1.0
3.9
1.0
15
29
26
f
mΩ
µA
nA
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 16
V
V
I
R
See Fig. 14
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 20A
= 20A
= 25°C, I
= 25°C, I
= 1.8Ω
= V
= 20V, V
= 20V, V
= 13V, I
= 13V
= 16V, V
= 13V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 13V, V
= 0V
GS
Max.
, I
6.3
86
20
Conditions
D
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 25µA
= 20A, V
= 20A
= 20A, V
= 25A
= 20A
e
= 0V
= 0V, T
= 0V
= 4.5V
www.irf.com
D
e
e
= 1mA
e
GS
DD
J
= 125°C
= 13V
= 0V
Units
mJ
mJ
A
e