IRLR8256PBF International Rectifier, IRLR8256PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR8256PBF
• Description: MOSFET N-CH 25V 81A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8256PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 81A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1470pF @ 13V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 81A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 81 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
90
80
70
60
50
40
30
20
10
0.1
0
10
1E-006
1
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.02
50
0.05
0.01
0.10
0.20
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
Limited By Package
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
Fig 10. Threshold Voltage vs. Temperature
R
1
R
2.5
2.0
1.5
1.0
0.5
1
τ
-75 -50 -25
2
τ
R
2
2
0.001
R
2
IRLR/U8256PbF
R
τ
3
3
R
τ
3
3
T J , Temperature ( °C )
τ
R
4
I D = 25µA
0
τ
4
R
4
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
C
25 50 75 100 125 150 175
τ
Ri (°C/W) τi (sec)
0.04252
0.57953
1.17480
0.60472
0.01
0.000007
0.000109
0.001003
0.005976
5
0.1