STD70N2LH5 STMicroelectronics, STD70N2LH5 Datasheet - Page 4

• Manufacturer Part Number: STD70N2LH5
• Description: MOSFET N-CH 25V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N2LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10094-2; STD70N2LH5

Electrical characteristics
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Table 6.
Table 7.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
t
t
I
I
d(on)
d(off)
V
SDM
RRM
I
Q
t
SD
t
t
SD
r
f
rr
rr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (resistive load)
Source drain diode
Parameter
Parameter
(1)
V
R
(Figure 2 and Figure 7)
V
R
(Figure 2 and Figure 7)
I
I
di/dt =100 A/µs,
V
(Figure 4)
SD
SD
DD
DD
G
G
DD
=4.7 Ω, V
=4.7 Ω, V
=24 A, V
=48 A,
=10 V, I
=10 V, I
Test conditions
Test conditions
=20 V, Tj = 25 °C
D
D
GS
= 24 A,
GS
= 24 A,
GS
=0
= 10 V
= 10 V
STD70N2LH5 - STU70N2LH5
Min.
Min.
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
Max.
Max.
192
1.1
48
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A