STD70N2LH5 STMicroelectronics, STD70N2LH5 Datasheet - Page 3

• Manufacturer Part Number: STD70N2LH5
• Description: MOSFET N-CH 25V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N2LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10094-2; STD70N2LH5

STD70N2LH5 - STU70N2LH5
2
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
= 25°C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
Parameter
gate-to-source
GS
= 0)
V
V
V
V
(Figure 3)
V
V
(Figure 8)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
I
V
V
V
V
V
SMD version
V
V
SMD version
V
D
DS
GS
DD
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 250 µA, V
=0
=15 V, I
=15 V, I
= V
= 10 V, I
= 10 V, I
= 5 V, I
= 5 V, I
=25 V, f=1 MHz,
=5 V
=5 V
Test conditions
Test conditions
= 25 V
= 25 V, T
= ± 22 V
GS
, I
D
D
D
D
D
D
D
= 24 A
= 24 A
= 48 A
= 48 A
C
= 24 A
= 24 A
= 250 µA
GS
= 125 °C
= 0
Min.
Min
25
Electrical characteristics
1
0.0064 0.0075
0.0084 0.0104
0.006
0.008
1300
Typ.
Typ.
TBD
TBD
TBD
TBD
300
1.1
50
8
0.0071
Max.
Max.
±
0.01
100
10
1
Unit
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
3/12
Ω
V
V
Ω
Ω
Ω
Ω